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Biosketch
Education:
08/2008 - 02/2014 PhD, Electrical Communication Engineering
Indian Institute of Science, Bengaluru
Thesis: High-k Dielectrics for Metal-Insulator-Metal Capacitors
Advisors: Prof. Navakanta Bhat and Prof. S. Mohan09/2002 - 06/2006 B.E., Electronics and Communication Engineering
Bangalore Institute of Technology, Bengaluru
affiliated to Visvesvaraya Technological University, BelagaviProfessional Experience:
06/2023 - present Associate Professor, Electrical Engineering
IIT Palakkad, Kerala07/2017 - 06/2023 Assistant Professor, Electrical Engineering
IIT Palakkad, Kerala09/2014 - 07/2017 Post-doctoral fellow, Electrical Engineering
Technion-Israel Institute of Technology, Haifa, Israel
Advisor: Prof. Gadi Eisenstein03/2014 - 09/2014 Research Associate, Dept. of ECE (in collaboration with CeNSE)
Indian Institute of Science, Bengaluru
in Nano-Devices and Sensors lab07/2006 - 07/2008 Systems Engineer
IBM Global Business Services, Bengaluru -
Research
Research interests primarily lie in the area of semiconductor device fabrication and characterization.
Please have a look at the publications section, for more details.Research Grants
Project Title Funding Agency Duration Role Engineering porous silicon towards the development of electrochemical immunosensor device for the detection of biomarker for acute brain injury IPTIF (UYARE) 03/2025 - 03/2026 Co-PI
PI: Dr. A. P. RasheedEngineering porous silicon membranes for water desalination IPTIF (UYARE) 01/2025 - 01/2026 PI Synthesis of layered transition metal oxides for optoelectronic applications SERB (POWER) 09/2022 - 09/2025 Co-PI
PI: Dr. T. H. ChoudhuryEngineering porous silicon for capacitive deionization SERB (POWER) 06/2022 - 06/2025 PI
Co-PI: Dr. T. H. ChoudhuryDesign & fabrication of inorganic electrochromic devices using layer engg. ISRO RESPOND 12/2021 - 12/2024 PI
Collab: Dr. T. H. ChoudhuryDesign & fabrication of an LED-based solar simulator with integrated electrical & optical measurement capability DST (SERD) 04/2021 - 04/2024 Multi-functional optically-sensitive devices with high efficiencies using perovskites SERB (SRG) 01/2020 - 01/2022 PI
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Teaching
EE5518 / EE3506 Nanoelectronic Devices Jan-Apr 2025, '24, '23, '22, '21, '20, '19, '18 EE3010A / EE3010 / EE3001 Solid-State Devices Aug-Nov 2024, '23, '22, '20, '19, '18, '17 EE5009 Nanoelectronics for Circuits and Systems Aug-Nov 2023, 2022, 2021, 2020 EE5526 Principles and Design of MEMS Aug-Dec 2021 EE5510 Fundamentals of Semiconductor Devices Aug-Nov 2019 EE2030 Electrical and Magnetic Circuits Aug-Nov 2018 EE5606 Micro and Nanoscale Devices Laboratory Jan-Apr 2025, 2024, 2023 EE2160 / EE2701 CAD Laboratory Jan-Apr 2020, 2019, 2018 EE3703 Analog Circuits Laboratory Aug-Nov 2017 -
Research Group
Current Alumni PhD Students Alankrith S J (joined in Jun 2022) Renjith Sasikumar (graduated in 2023) Susomon Dutta (joined in Jan 2023) Sabiha Sultana (joined in Aug 2023) Hummad Sayed (joined in Jan 2024) MS Students Mejo A J (joined in Jan 2020) Kumudini Ganesh (graduated in 2023) Samrat Malakar (joined in Jul 2024) Sreejyothi Sankararaman (graduated in 2023) -
Additional Information
TitlePatentsDescription
- Method of eliminating pull-in instability and hybrid MEMS actuator incorporating the method
[R. T. Raman, R. Padmanabhan, and A. Ajoy] Indian Patent Number 398690, granted Jun 2022.
- Method of eliminating pull-in instability and hybrid MEMS actuator incorporating the method
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Publications
S. Dutta, M. A. Johnny, S. Suresh, T. H. Choudhury, and R. PadmanabhanElectrochemical Society Meeting Abstracts 245 (MA2024-01) 1248 (2024)S. Dutta, C. R. Selvakumar, and R. Padmanabhan2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) 1-3 (2024)Alankrith S. J., T. H. Choudhury, and R. Padmanabhan2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) 1-3 (2024)A. Yedida, S. N. Teja, V. Sharma, and R. Padmanabhan2023 IEEE Nanotechnology Materials and Devices Conference (NMDC) 698-702 (2023)R. Sasikumar, L. G. Kolla, D. Misra, and R. PadmanabhanElectrochemical Society Meeting Abstracts 243 (29) 1782-1782 (2023)R. Sasikumar, K. L. Ganapathi, D. Misra, and R. Padmanabhan2023 Device Research Conference (DRC) 1-2 (2023)R. Sasikumar and R. Padmanabhan2023 18th Conference on Ph. D Research in Microelectronics and Electronics (PRIME) 253-256 (2023)M. A. Johnny, S. Suresh, T. H. Choudhury, and R. Padmanabhan2022 IEEE Nanotechnology Materials and Devices Conference (NMDC) 17-20 (2022)K. Ganesh and R. PadmanabhanProc. 22nd IEEE International Conference on Nanotechnology (IEEE NANO) 496-499 (2022)R. T. Raman, R. Padmanabhan, and A. AjoyIEEE Trans. Electron Devices 69 (9) 5162-5169 (2022)R. T. Raman, J. Shibu, R. Padmanabhan, and A. AjoyIEEE Trans. Electron Devices 69 (6) 3359-3366 (2022)S. Sankararaman, K. Balasubramanian, and R. PadmanabhanXXI International Workshop on Physics of Semiconductor Devices (2021)S. Verma, T. H. Choudhury, and R. Padmanabhan2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC) 1-4 (2021)V. Sharma and R. Padmanabhan2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC) 1-5 (2021)K. Ganesh and R. Padmanabhan2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC) 1-5 (2021)R. Sasikumar, A. Ajoy, and R. PadmanabhanIEEE Trans. Nanotechnol. 20 912-921 (2021)S. Sankararaman, K. Balasubramanian, and R. PadmanabhanCLEO: Science and Innovations JW1A. 183 (2021)R. T. Raman, A. Ajoy, and R. Padmanabhan2021 Virtual MRS Spring Meeting (2021)R. Sasikumar and R. Padmanabhan2020 5th IEEE Int. Conf. Emerging Electron. 1-4 (2020)K. Ganesh and R. Padmanabhan2020 5th IEEE Int. Conf. Emerging Electron. 1-4 (2020)V. Sharma, S. Saini, and R. Padmanabhan2020 5th IEEE Int. Conf. Emerging Electron. 1-4 (2020)R. T. Raman, A. Ajoy, and R. PadmanabhanIEEE Trans. Electron Devices 67 (10) 4413-4420 (2020)R. Sasikumar, A. Ajoy, and R. PadmanabhanProc. 20th IEEE International Conference on Nanotechnology (IEEE NANO) 159-163 (2020)S. Saini, I. J. Lalan, and R. Padmanabhan20th International Workshop on the Physics of Semiconductor Devices (2019)R. Sasikumar, A. Ajoy, and R. Padmanabhan20th International Workshop on the Physics of Semiconductor Devices (2019)R. Padmanabhan, O. Sorias, O. Eyal, V. Mikhelashvili, M. Orenstein, and G. EisensteinIEEE Trans. Nanotechnol. 16 (5) 778-783 (2017)V. Mikhelashvili, G. Ankonina, Y. Kauffmann, G. Atiya, W. D. Kaplan, R. Padmanabhan, and G. EisensteinJ. Appl. Phys. 121 (21) 214504:1-7 (2017)V. Mikhelashvili, R. Padmanabhan, and G. EisensteinJ. Appl. Phys. 122 (3) 034503:1-9 (2017)V. Mikhelashvili, R. Padmanabhan, B. Meyler, S. Yofis, and G. EisensteinJ. Appl. Phys. 120 (22) 224502:1-9 (2016)R. Padmanabhan, O. Sorias, O. Eyal, V. Mikhelashvili, M. Orenstein, and G. EisensteinIEEE Nanotechnology Materials and Devices Conference (NMDC) 2016 (2016)R. Padmanabhan, S. Mohan, Y. Morozumi, S. Kaushal, and N. BhatIEEE Trans. Electron Devices 63 (10) 3928-3935 (2016)V. Mikhelashvili, B. Meyler, S. Yofis, R. Padmanabhan, and G. EisensteinAppl. Phys. Lett. 108 (25) 253504:1-5 (2016)R. Padmanabhan, O. Eyal, B. Meyler, S. Yofis, G. Atiya, W. D. Kaplan, V. Mikhelashvili, and G. EisensteinIEEE Trans. Nanotechnol. 15 (3) 492-498 (2016)V. Mikhelashvili, R. Padmanabhan, B. Meyler, S. Yofis, G. Atiya, Z. Cohen-Hyams, S. Weindling, G. Ankonina, J. Salzman, W. D. Kaplan, and G. EisensteinJ. Appl. Phys. 118 (13) 134504:1-11 (2015)R. Padmanabhan, V. Mikhelashvili, B. Meyler, S. Yofis, S. Weindling, J. Salzman, and G. EisensteinProc. 15th IEEE International Conference on Nanotechnology (IEEE NANO) 1235-1238 (2015)R. Padmanabhan, N. Bhat, S. Mohan, Y. Morozumi, and S. KaushalProc. Int. Conf. IC Design Technol. 1-4 (2014)R. Padmanabhan, N. Bhat, and S. MohanProc. 17th Int. Workshop Phys. Semiconductor Devices, Environ. Sci. Eng. 37-39 (2014)R. Padmanabhan, N. Bhat, S. Mohan, Y. Morozumi, and S. KaushalProc. Mater. Res. Soc. Symp. 1561 (2013)R. Padmanabhan, N. Bhat, and S. MohanIEEE Trans. Electron Devices 60 (5) 1523-1528 (2013)R. Padmanabhan, N. Bhat, S. MohanProc. IEEE Int. Conf. Emerging Electron. 1-4 (2012)R. Padmanabhan, N. Bhat, and S. MohanIEEE Trans. Electron Devices 59 (5) 1364-1370 (2012)
